ACE2304 mosfet equivalent, n-channel enhancement mode mosfet.
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30V/3.2A, RDS(ON)=65mΩ@VGS=10V 30V/2.0A, RDS(ON)=90mΩ@VGS=4.5V Super high density cell design for extr.
N-Channel Enhancement Mode MOSFET
The ACE2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state .
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